GaN epitaxial layers grown on WI-SIC by the sublimation sandwich technique
نویسندگان
چکیده
We report on the structural and optical properties of GaN epitaxial layers grown on GH-Sic. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2 X 1Oi7 cmw3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These tidings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
منابع مشابه
GaN ON 6H-SiC -- STRUCTURAL AND OPTICAL PROPERTIES
Recent progress in the growth of high quality 6H-SiC single crystal leads to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal plane can reduce strain effects at the interface. We employed the sublimation sandwich method to grow single crystal layers at reasonable growth rates with free carrier concentrations of 2x10...
متن کاملNanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in G...
متن کاملMicro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4H-SiC(0001) substrate K.Grodecki
It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...
متن کاملMicro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC
Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscop...
متن کاملCUBIC GaN HETEROEPITAXY ON THIN-SiC-COVERED Si(001)
We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epit...
متن کامل